AIN buffer N-polar GaN HEMT profile
AssigneeNorthrop Grumman Systems Corporation
InventorsVincent Gambin, Xing Gu, Benjamin Heying
Life of this patent
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Abstract
An N-face GaN HEMT device including a semiconductor substrate, a buffer layer including AlN or AlGaN deposited on the substrate, a barrier layer including AlGaN or AlN deposited on the buffer layer and a GaN channel layer deposited on the barrier layer. The channel layer, the barrier layer and the buffer layer create a two-dimensional electron gas (2-DEG) layer at a transition between the channel layer and the barrier layer.
Claims20
An N-face GaN semiconductor device comprising:
- a substrate;
- a buffer layer including aluminum deposited on the substrate;
- a barrier layer including aluminum deposited on the buffer layer;
- and
- a GaN channel layer deposited on the barrier layer, where the channel layer, the barrier layer and the buffer layer create a two-dimensional electron gas (2-DEG) layer at a transition between the channel layer and the barrier layer.
An N-face GaN high electron mobility transistor (HEMT) device comprising:
- a silicon carbide (SiC) substrate;
- a buffer layer including aluminum deposited on the substrate;
- a barrier layer including aluminum deposited on the buffer layer;
- and
- a GaN channel layer deposited on the barrier layer, where the channel layer, the barrier layer and the buffer layer create a two-dimensional electron gas (2-DEG) layer at a transition between the channel layer and the barrier layer.
A method for forming an N-face GaN semiconductor device, said method comprising:
- providing a substrate;
- epitaxially growing a buffer layer on a face of the substrate that creates an N-face oriented device where the buffer layer includes aluminum;
- epitaxially growing a barrier layer including aluminum on the buffer layer;
- and
- epitaxially growing a GaN channel layer on the barrier layer so that the channel layer, the barrier layer and the buffer layer create a two-dimensional electron gas (2-DEG) layer at a transition between the channel layer and the barrier layer.
Dependencies are inferred from the claim text.