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US 8,710,505 B2Granted
Semiconductor device
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorHajime Kimura
Life of this patent
Estimating the term…
Abstract
Adverse effects of variation in threshold voltage are reduced. In a semiconductor device, electric charge is accumulated in a capacitor provided between a gate and a source of a transistor, and then, the electric charge accumulated in the capacitor is discharged; thus, the threshold voltage of the transistor is obtained. After that, current flows to a load. In the semiconductor device, the potential of one terminal of the capacitor is set higher than the potential of a source line, and the potential of the source line is set lower than the potential of a power supply line and the cathode side potential of the load.
Claims23
A semiconductor device comprising:
- a transistor;
- a first switch one terminal of which is electrically connected to a gate of the transistor;
- a second switch one terminal of which is electrically connected to one of a source and a drain of the transistor;
- a third switch one terminal of which is electrically connected to the one of the source and the drain of the transistor;
- a fourth switch one terminal of which is electrically connected to the other of the source and the drain of the transistor and the other tee urinal of the first switch;
- a fifth switch one terminal of which is electrically connected to the other terminal of the third switch;
- a capacitor one electrode of which is electrically connected to the gate of the transistor, and the other electrode of which is electrically connected to the other terminal of the third switch;
- and
- a load one electrode of which is electrically connected to the one of the source and the drain of the transistor.
6 more elements
A semiconductor device comprising:
- a transistor;
- a first switch one terminal of which is electrically connected to a gate of the transistor;
- a second switch one terminal of which is electrically connected to one of a source and a drain of the transistor;
- a third switch one terminal of which is electrically connected to the one of the source and the drain of the transistor;
- a fourth switch one terminal of which is electrically connected to the other of the source and the drain of the transistor and the other terminal of the first switch;
- a fifth switch one terminal of which is electrically connected to the other terminal of the third switch;
- a capacitor one electrode of which is electrically connected to the gate of the transistor, and the other electrode of which is electrically connected to the other terminal of the third switch;
- a load one electrode of which is electrically connected to the one of the source and the drain of the transistor;
- a first wiring electrically connected to the other terminal of the second switch;
- a second wiring electrically connected to the other terminal of the fourth switch and the other terminal of the fifth switch;
- and
- a third wiring electrically connected to the other electrode of the load,
- wherein the first wiring is electrically connected to a circuit capable of supplying a first potential,
- wherein the second wiring is electrically connected to a circuit capable of supplying a second potential,
- wherein the third wiring is electrically connected to a circuit capable of supplying a third potential,
- wherein the first potential is lower than the third potential, and
- wherein the second potential is higher than the third potential.
14 more elements
A semiconductor device comprising:
- a transistor;
- a first switch one terminal of which is electrically connected to a gate of the transistor;
- a second switch one terminal of which is electrically connected to one of a source and a drain of the transistor;
- a third switch one terminal of which is electrically connected to the one of the source and the drain of the transistor;
- a fourth switch one terminal of which is electrically connected to the other of the source and the drain of the transistor and the other terminal of the first switch;
- a fifth switch one terminal of which is electrically connected to the other terminal of the third switch;
- a capacitor one electrode of which is electrically connected to the gate of the transistor, and the other electrode of which is electrically connected to the other terminal of the third switch;
- and
- a load one electrode of which is electrically connected to the one of the source and the drain of the transistor;
- a first wiring electrically connected to the other terminal of the second switch;
- a second wiring electrically connected to the other terminal of the fourth switch;
- a third wiring electrically connected to the other electrode of the load;
- and
- a fourth wiring electrically connected to the other terminal of the fifth switch,
- wherein the first wiring is electrically connected to a circuit capable of supplying a first potential,
- wherein the second wiring is electrically connected to a circuit capable of supplying a second potential,
- wherein the third wiring is electrically connected to a circuit capable of supplying a third potential,
- wherein the fourth wiring is electrically connected to a circuit capable of supplying a fourth potential,
- wherein the first potential is lower than the third potential, and
- wherein the second potential is higher than the third potential.
17 more elements
Dependencies are inferred from the claim text.