Thin film transistor and flat panel display device including the same
AssigneeSamsung Display Co., Ltd.
InventorsTack Ahn, Min-Chul Suh, Jae-Bon Koo
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Abstract
A flat panel display device is disclosed. In one embodiment, the flat panel display device includes i) a semiconductor layer including a channel region and a groove, wherein the channel region electrically connects a source electrode and a drain electrode, and the groove is configured to separate the channel region from adjacent thin film transistors and ii) a stop layer formed below at least a portion of the semiconductor layer. According to one embodiment of the invention, a semiconductor layer can be easily patterned without using a dry or wet etching technique such as photolithography.
Claims17
A flat panel display device comprising a thin film transistor, wherein the thin film transistor comprises:
- a semiconductor layer formed over a substrate, wherein the semiconductor layer comprises a channel region and a groove, wherein the channel region electrically connects a source electrode and a drain electrode, and wherein the groove is configured to separate the channel region from adjacent thin film transistors;
- and
- a stop layer formed below at least a portion of the semiconductor layer, wherein the stop layer contacts the source and drain electrodes, wherein the stop layer does not overlap with the channel region in a direction vertically extending from the substrate to the stop layer, wherein the stop layer is formed only below the groove and an immediate periphery thereof, and wherein the depth of the groove is at least equal to the thickness of the semiconductor layer.
Dependencies are inferred from the claim text.