Bipolar junction transistor with a self-aligned emitter and base
AssigneeInternational Business Machines Corporation
InventorsKevin K. Chan, Erik M. Dahlstrom, Peter B. Gray, David L. Harame, Qizhi Liu
Life of this patent
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Abstract
Methods for fabricating bipolar junction transistors with self-aligned emitter and extrinsic base, bipolar junction transistors made by the methods, and design structures for a BiCMOS integrated circuit. The bipolar junction transistor is fabricated using a sacrificial emitter pedestal that provides a sacrificial mandrel promoting self-alignment between the emitter and the extrinsic base. The sacrificial emitter pedestal is subsequently removed to open an emitter window extending to the intrinsic base. An emitter is formed in the emitter window that lands on the intrinsic base.
Claims16
A device structure for a bipolar junction transistor, the device structure comprising:
- an intrinsic base including a top surface;
- an extrinsic base on the top surface of the intrinsic base;
- a silicide layer on the extrinsic base;
- a plurality of first spacers having an outer surface, the first spacers oriented to project vertically relative to the top surface of the intrinsic base, the first spacers arranged to line an emitter window therebetween, and the emitter window extending through extrinsic base and the silicide layer to the top surface of the intrinsic base;
- and
- an emitter including a portion disposed in the emitter window and a head protruding out of the emitter window, the portion of the emitter in contact with the intrinsic base, and the portion of the emitter having a plurality of sidewalls that border the first spacers and that are separated from the extrinsic base and the silicide layer by the first spacers,
- wherein the silicide layer and the extrinsic base each terminate at the outer surface of the first spacers so that the silicide layer and the extrinsic base are aligned relative to each other and relative to the portion of the emitter by the first spacers.
A hardware description language (HDL) design structure encoded on a machine-readable data storage medium, the HDL design structure comprising elements that when processed in a computer-aided design system generates a machine-executable representation of a bipolar junction transistor, the HDL design structure comprising:
- an intrinsic base including a top surface;
- an extrinsic base on the top surface of the intrinsic base;
- a silicide layer on the extrinsic base;
- a plurality of first spacers having an outer surface, the first spacers oriented to project vertically relative to the top surface of the intrinsic base, the first spacers arranged to line an emitter window therebetween, and the emitter window extending through extrinsic base and the silicide layer to the top surface of the intrinsic base;
- and
- an emitter including a portion disposed in the emitter window and a head protruding out of the emitter window, the portion of the emitter in contact with the intrinsic base, and the portion of the emitter having a plurality of sidewalls that border the first spacers and that are separated from the extrinsic base and the silicide layer by the first spacers,
- wherein the silicide layer and the extrinsic base each terminate at the outer surface of the first spacers so that the silicide layer and the extrinsic base are aligned relative to each other and relative to the portion of the emitter by the first spacers.
Dependencies are inferred from the claim text.