Organic dual-gate memory and method for producing same
AssigneeCommissariat A L'energie Atomique Et Aux Energies Alternatives
InventorsRomain Gwoziecki, Mohamed Benwadih, Philippe Coronel, Stéphanie Jacob
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Abstract
The organic memory device is a double-gate transistor that successively comprises a first gate electrode, a first gate dielectric, an organic semi-conductor material, a second gate dielectric and a second gate electrode. Source and drain electrodes are arranged in the organic semiconductor material and define an inter-electrode surface. A trapping area is arranged between the organic semiconductor material and one of the gate electrodes and is in electric contact with one of the gate electrodes or the organic semi-conductor material. The trapping area is at least facing the inter-electrode surface.
Claims13
A double-gate transistor comprising:
- a first gate electrode,
- a first gate dielectric,
- an organic semiconductor material,
- a second gate electrode,
- a second gate dielectric,
- source and drain electrodes delineating an inter-electrode surface of the semiconductor material,
- an electric charge trapping material arranged between the organic semi-conductor material and one of the gate electrodes and partially facing the inter-electrode surface, the trapping material being in physical contact with one of the gate electrodes or with the organic semiconductor material.
A method for producing a memory device successively comprising:
- forming a first gate electrode,
- forming a first gate dielectric,
- forming source and drain electrodes in contact with an organic semiconductor material, the source and drain electrodes defining an inter-electrode surface,
- forming a second gate dielectric,
- forming a second gate electrode,
- forming an electric charge trapping material between the organic semiconductor material and one of the gate electrodes, the electric charge trapping material being in physical contact with one of the gate electrodes or with the organic semiconductor material, the electric charge trapping material being partially facing the inter-electrode surface.
Dependencies are inferred from the claim text.