Forming agent for gate insulating film of thin film transistor
AssigneeNissan Chemical Industries, Ltd.
InventorsShinichi Maeda, Takahiro Kishioka
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Abstract
It is an object to provide a novel forming agent for a gate insulating film that not only provides high insulating properties for the gate insulating film but also takes account of the electric characteristics of a thin film transistor element. A forming agent for a gate insulating film of a thin film transistor characterized by comprising an oligomer compound or a polymer compound including a structural unit containing a pyrimidinetrione ring having a hydroxyalkyl-containing group as a substituent on a nitrogen atom; a gate insulating film formed by the forming agent; and a thin film transistor.
Claims6
A thin film transistor comprising:
- a substrate;
- a gate electrode;
- a gate insulating film including a component (i):
- an oligomer compound or a polymer compound with a repeating unit represented by the following formula [1]:
- (where X is a structural unit of Formula [2] or Formula [3], each of Q1 Q2, and Q3 is independently a hydrogen atom, an optionally branched C1-6 alkyl group, C3-6 alkenyl group, C1-6 alkoxy group, or C1-6 alkoxycarbonyl group, a phenyl group, a trifluoromethyl group, a pentafluoroethyl group, or a cyano group;
- each of A1 to A6 is independently a hydrogen atom, a methyl group, or an ethyl group;
- n is an integer of 1 to 500;
- and each of k and h is independently 1 or 2);
- source and drain electrodes;
- and
- a semiconductor layer.
Dependencies are inferred from the claim text.