Optoelectronic semiconductor chip and method for manufacturing a contact structure for such a chip

An optoelectronic semiconductor chip comprising:

• a semiconductor body having a semiconductor layer sequence with an active region suitable for generating radiation;
• a radiation-transmissive and electrically conductive contact layer arranged on the semiconductor body and electrically connected to the active region, the contact layer directly adjoining both a barrier layer of the semiconductor layer sequence and a connection layer applied to the semiconductor body and having a structure;
• and
• an electrode arranged on the semiconductor body on a side of the active region facing away from the barrier layer, the electrode having a connection area, wherein the contact layer directly adjoins the barrier layer in a region of the barrier layer, said region covering the entire connection area of the electrode;
• wherein the electrode comprises a plurality of electrically conducting webs for achieving a current expansion across an upper side of the semiconductor body, wherein the electrically conducting webs arranged on the semiconductor body start from the connection area of the electrode and are in direct electrical contact with the connection area;
• wherein a barrier area is designed to have via webs and a region covering the entire connection area of the electrode is adapted to the electrode having the electrically conducting webs and the connection area;
• wherein the via webs have a greater lateral extent than the corresponding electrically conducting webs;
• and
• wherein the region covering the entire connection area of the electrode has a greater lateral extent than the connection area.

A method of manufacturing an optoelectronic semiconductor chip, the method comprising:

• providing a semiconductor body having a semiconductor layer sequence with an active region suitable for generating radiation;
• forming a radiation-transmissive and electrically conductive contact layer on the semiconductor body and electrically connected to the active region, the contact layer directly adjoining both a barrier layer of the semiconductor layer sequence and a connection layer applied to the semiconductor body and having a structure;
• and
• forming an electrode on the semiconductor body on a side of the active region facing away from the barrier layer, the electrode having a connection area,
• wherein the connection layer has a cut out in a region of the barrier layer,
• wherein the region of the barrier layer where the connection layer has a cut out is free of the connection layer,
• wherein the contact layer directly adjoins the barrier layer in the region of the barrier layer,
• wherein from a top view of the active region of the semiconductor layer sequence, the region of the barrier layer covers the entire electrode,
• wherein the connection layer and the contact layer both adjoin the barrier layer,
• wherein the connection layer and the contact layer both comprise a radiation-transmissive and electrically conductive oxide, and
• wherein the connection layer and the contact layer are doped differently or their materials are selected such that an electrical contact resistance of the contact layer to the connection layer is lower than an electrical contact resistance of the contact layer to the barrier layer.