Back to results
US 8,710,485 B2Granted
Semiconductor device and method of manufacturing the same
AssigneeKabushiki Kaisha Toshiba
InventorsMasumi Saitoh, Toshinori Numata, Kiwamu Sakuma, Haruka Kusai, Takayuki Ishikawa
Life of this patent
Estimating the term…
Abstract
According to one embodiment, a semiconductor device includes a fin type stacked layer structure which has first to third semiconductor layers, and first to third layer select transistors to select one of the first to third semiconductor layers. The second layer select transistor is normally on in the second semiconductor layer, and is controlled to be on or off in the first and third semiconductor layers. A channel region of the second semiconductor layer which is covered with a gate electrode of the second layer select transistor has a metal silicide.
Claims34
A semiconductor device comprising:
- a semiconductor substrate;
- a fin type stacked layer structure which has first to n-th semiconductor layers (n is a natural number equal to or more than 2) that are stacked in a first direction perpendicular to a surface of the semiconductor substrate and which extends in a second direction parallel to the surface of the semiconductor substrate;
- and
- first to n-th layer select transistors to select one of the first to n-th semiconductor layers,
- wherein the i-th layer select transistor (i is one of 1 to n) among the first to n-th layer select transistors has a gate electrode which extends in the first direction on the surface of the fin type stacked layer structure that is located in a third direction perpendicular to the first and second directions, is normally on in the i-th semiconductor layer among the first to n-th semiconductor layers, and is controlled to be on or off in the remaining semiconductor layers other than the i-th semiconductor layer, and
- a channel region of the i-th semiconductor layer which is covered with the gate electrode of the i-th layer select transistor has a metal silicide.
3 more elements
A semiconductor device comprising:
- a semiconductor substrate;
- a fin type stacked layer structure which is disposed in a first direction perpendicular to a surface of the semiconductor substrate and which extends in a second direction parallel to the surface of the semiconductor substrate;
- a beam which is connected to one end of the fin type stacked layer structure in the second direction and which extends in a third direction perpendicular to the first and second directions;
- and
- first to n-th layer select transistors (n is a natural number equal to or more than 2) arranged on the surface of the beam that is located in the second direction,
- wherein the fin type stacked layer structure and the beam have first to n-th semiconductor layers, the first to n-th layer select transistors select one of the first to n-th semiconductor layers,
- the i-th layer select transistor (i is one of 1 to n) among the first to n-th layer select transistors has a gate electrode which extends in the first direction on the surface of the beam that is located in the second direction, is normally on in the i-th semiconductor layer among the first to n-th semiconductor layers, and is controlled to be on or off in the remaining semiconductor layers other than the i-th semiconductor layer, and
- a channel region of the i-th semiconductor layer which is covered with the gate electrode of the i-th layer select transistor has a metal silicide.
5 more elements
A semiconductor device comprising:
- a semiconductor substrate;
- an insulating layer which is disposed on the semiconductor substrate and which has first and second recess portions;
- a first semiconductor layer which is disposed in the first recess portion and which comprises an n-type region and a p-type region on the n-type region;
- and
- a second semiconductor layer which is disposed in the second recess portion,
- wherein the first semiconductor layer includes a metal silicide in an upper surface of the p-type region and the second semiconductor layer includes a metal silicide as a whole.
3 more elements
A semiconductor device comprising:
- a semiconductor substrate;
- an insulating layer which is disposed on the semiconductor substrate;
- first and second semiconductor layers which are disposed on the insulating layer;
- a first FET which has a first gate electrode disposed on the first semiconductor layer and which is controlled to be on or off;
- and
- a second FET which has a second gate electrode disposed on the second semiconductor layer and which is normally on,
- wherein a channel of the second FET has a metal silicide.
4 more elements
Dependencies are inferred from the claim text.