Method for manufacturing non-volatile memory device, non-volatile memory element, and non-volatile memory device

A non-volatile memory device comprising:

• a plurality of pillar electrodes disposed perpendicular to a main surface of a substrate;
• a plurality of conductive layers disposed parallel to the main surface of the substrate to intersect with the pillar electrodes, each of the conductive layers comprising a transition metal;
• a plurality of interlayer insulating films each of which is interposed between the conductive layers and which comprises an insulating material;
• and
• a plurality of variable resistance layers each of which is disposed exclusively at an intersection between each of the pillar electrodes and a corresponding one of the conductive layers each of the variable resistance layers comprising an oxide of the transition metal that is comprised in each of the conduction layers, and having (i) an inner side surface that surrounds an outer side surface of the corresponding one of the pillar electrodes, (ii) an outer side surface surround by each of the conductive layers in a corresponding one of the layers, and (iii) a resistance value that reversibly changes according to an application of an electric signal.