Memristive junction with intrinsic rectifier
AssigneeHewlett-Packard Development Company, L.P.
InventorsJianhua Yang, John Paul Strachan, Matthew D. Pickett
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Abstract
A memristive junction (400) can comprise a first electrode (102) and second electrode (104), with a memristive region (106) situated between them. The memristive region is configured to switch between two activation states via a switching voltage (118) applied between the electrodes. The activation state can be ascertained by application of a reading voltage between the first electrode and second electrode. The junction further comprises a rectifier region situated at an interface (420) between the first electrode and the memristive region, and comprising a layer (402) of temperature-responsive transition material that is substantially conductive at the switching voltage and substantially resistive at the reading voltage.
Claims15
A memristive junction with intrinsic rectification, comprising:
- a first electrode;
- a second electrode;
- a memristive region situated between the first electrode and the second electrode, and configured to switch between two activation states via a switching voltage applied between the first electrode and the second electrode and wherein the activation state can be determined by application of a reading voltage between the first electrode and the second electrode;
- and
- a rectifier region disposed at an interface between the first electrode and the memristive region and comprising a layer of a temperature-responsive transition material that is substantially conductive at or above a switching temperature and substantially resistive below the switching temperature,
- wherein the applied switching voltage is to cause the temperature-responsive transition material to reach the switching temperature.
A method of making a memristive junction, comprising:
- depositing a first electrode onto a substrate;
- depositing onto the first electrode a layer of temperature-responsive transition material capable of assuming a conductive state at or above a switching temperature and assuming a substantially resistive state below the switching temperature;
- depositing a layer of memristive material onto the layer of temperature-responsive transition material to create a memristive region;
- and
- depositing a second electrode onto the layer of memristive material.
Dependencies are inferred from the claim text.