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US 8,710,482 B2Granted
Memory component and memory device
AssigneeSony Corporation
InventorsShuichiro Yasuda, Katsuhisa Aratani, Kazuhiro Ohba, Hiroaki Sei
Life of this patent
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Abstract
A memory component includes: a first electrode; a memory layer; and a second electrode in this order, wherein the memory layer includes a high resistance layer which includes tellurium (Te) as the chief component among anion components and is formed on the first electrode side; and an ion source layer which includes at least one kind of metal element and at least one kind of chalcogen element among tellurium (Te), sulfur (S) and selenium (Se) and is formed on the second electrode side.
Claims14
A memory component comprising:
- a first electrode;
- a second electrode;
- and
- a memory layer between the first and second electrodes,
- wherein:
- the memory layer includes (a) on a first electrode side thereof, a resistance change layer that is composed of a plurality of layers, at least one of the plurality of layers including tellurium (Te) as the chief component among anion components, and (b) on a second electrode side thereof, an ion source layer with at least one kind of metal element and at least one kind of chalcogen element selected from the group consisting of tellurium (Te), sulfur (S) and selenium (Se),
- the memory component is configured such that an ionized metal element from the ion source layer is diffused into the resistance change layer to change a resistance of the resistance change layer from a high resistance state to a low resistance state, and
- a first one of the plurality of layers of the resistance change layer has an Al—Te compound, an Mg—Te compound, or a Zn—Te compound as a main component, and a second one of the plurality of layers of the resistance change layer has oxygen (O) or nitrogen (N) as a main component.
5 more elements
A memory device comprising:
- a plurality of memory components each of which has a first electrode, a second electrode, and a memory layer between the first and second electrodes;
- and
- a pulse applying means for selectively applying voltage or current pulses to the plurality of memory components,
- wherein:
- (i) the memory layer in each memory component includes (a) on a first electrode side of the memory layer, a resistance change layer that is composed of a plurality of layers, at least one of the plurality of layers including tellurium (Te) as the chief component among anion components, and (b) on a second electrode side of the memory layer, an ion source layer with at least one kind of metal element and at least one kind of chalcogen element selected from the group consisting of tellurium (Te), sulfur (S) and selenium (Se),
- (ii) each memory component is configured such that an ionized metal element from the ion source layer is diffused into the resistance change layer to change a resistance of the resistance change layer from a high resistance state to a low resistance state, and
- (iii) in each memory component, a first one of the plurality of layers of the resistance change layer has an Al—Te compound, an Mg—Te compound, or a Zn—Te compound as a main component, and a second one of the plurality of layers of the resistance change layer has oxygen (O) or nitrogen (N) as a main component.
4 more elements
Dependencies are inferred from the claim text.