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US 8,710,481 B2Granted
Non-volatile memory cell containing a nano-rail electrode
AssigneeSanDisk 3D LLC
InventorsJames K. Kai, Henry Chien, George Matamis, Vinod R. Purayath
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Abstract
A non-volatile memory device includes a plurality of non-volatile memory cells. Each of the non-volatile memory cells includes a first electrode, a diode steering element, a storage element located in series with the diode steering element, a second electrode, and a nano-rail electrode having a width of 15 nm or less.
Claims9
A non-volatile memory device comprising a plurality of non-volatile memory cells, wherein each of the non-volatile memory cells comprises:
- a first electrode;
- a diode steering element;
- a storage element located in series with the diode steering element;
- a second electrode;
- and
- a nano-rail electrode having a width of 15 nm or less.
3 more elements
Dependencies are inferred from the claim text.