Radiation detector array
AssigneeKoninklijke Philips N.V.
InventorsRandall P. Luhta, Marc A. Chappo, Brian E. Harwood, Rodney A. Mattson, Chris J. Vrettos
Life of this patent
Estimating the term…
Abstract
A radiation detector module (22) particularly well suited for use in computed tomography (CT) applications includes a scintillator (200), a photodetector array (202), and signal processing electronics (205). The photodetector array (202) includes a semiconductor substrate (208) having a plurality of photodetectors and metalization (210) fabricated on non-illuminated side of the substrate (208). The metalization routes electrical signals between the photodetectors and the signal processing electronics (205) and between the signal processing electronics (205) and an electrical connector (209).
Claims19
A radiation detector comprising:
- a scintillator;
- a photodetector array comprising:
- a semiconductor substrate, including:
- a plurality of photodetector elements in optical communication with the scintillator;
- and
- a CMOS metalization side, opposite the scintillator, wherein the metallization side includes alternating insulating and metal layers and is a part of the semiconductor substrate;
- and
- signal processing electronics carried on a side of the photodetector array opposite the scintillator;
- wherein the metalization side includes a first plurality of contacts electrically connected to the photodetector elements, a second plurality of contacts in electrical communication with the first plurality of contacts and the signal processing electronics, wherein the metalization side includes a first metalization layer that connects at least one discrete component and the second plurality of contacts, a second metalization layer that connects the first plurality of contacts to the second plurality of contacts, and a third metalization layer located between at least a portion of the first metalization layer and at least a portion of the second metalization layer.
A semiconductor substrate of a radiation detector comprising:
- a two dimensional array of photodetector elements which detect radiation;
- and
- a CMOS metalization side of the semiconductor substrate which is opposite the array of photodetector elements, wherein the metalization includes first contacts and second contacts, the metalization side, comprising:
- a first metal layer configured to connect the first contacts, which are electrically connected to the array of photodetector elements, and the second contacts;
- a second metal layer configured to connect the second contacts and at least one discrete component of readout electronics;
- and
- a third metal layer located between at least a portion of the first metal layer and at least a portion of the second metal layer.
Dependencies are inferred from the claim text.