High dynamic range pixel structure

Abstract

A pixel structure comprises a photo-sensitive element PPD for generating charges in response to light and a charge conversion element FD. A first transfer gate TX is connected between the photo-sensitive element PPD and the charge conversion element. A charge storage element PG is connected to the photo-sensitive element PPD. The charge storage element PG has a higher charge storage density than the photo-sensitive element PPD. The charge storage element PG is located on the photo-sensitive element PPD side of the first transfer gate TX and is arranged to collect charges generated by the photo-sensitive element PPD during an integration period. The charge storage element can be a photo gate, photodiode or capacitor. Arrangements are provided with, and without, a potential barrier between the photo-sensitive element PPD and the charge storage element PG.

Dependencies are inferred from the claim text.