Solution based precursors
AssigneeLinde Aktiengesellschaft
InventorsCe Ma, Kee-Chan Kim, Graham Anthony McFarlane
Life of this patent
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Abstract
Solution-based precursors for use as starting materials in film deposition processes, such as atomic layer deposition, chemical vapor deposition and metalorganic chemical vapor deposition. The solution-based precursors allow for the use of otherwise solid precursors that would be unsuitable for vapor phase deposition processes because of their tendency to decompose and solidify during vaporization.
Claims13
A solution-based precursor comprising a solid precursor dissolved in a solvent having a boiling point closely matched to that of the solid precursor, the precursor having the formula:
- AxByM(m)
- wherein M is a metal, m is the oxidation state of the metal M and is from 0 to 7, and A and B are the same or different and are selected from the group of chemical classes comprising a) cyclopentadienyl (Cp) and its derivatives (R1R2R3R4R5Cp;
- wherein R1, R2, R3, R4 and R5 are the same or different and can be hydrogen or alkyl [CnH2n+1, n=1-6]);
- b) primary, secondary or tertiary alkyl groups (CnH2n+1, n=1-12);
- c) cycloalkyl groups (CnR2n−1, n=3-12, wherein R is hydrogen or alkyl groups);
- d) cycloalkyldienes (CnR2n−4, n=4-12, wherein R is hydrogen or alkyl groups);
- e) benzene and its derivatives (R1R2R3R4R5R6C6;
- wherein R1, R2, R3, R4, R5 and R6 are the same or different and can be hydrogen or alkyl [CnH2n+1, n=1-6]);
- f) amides (R1R2N, wherein R1 and R2 are the same or different and can be hydrogen or alkyl [CnH2n+1, n=1-6]);
- and g) bidentate ligands (R1E1=C(R3)−[C(R4)=C(R5)]n−E2R2, wherein E1 and E2 are the same or different and can be nitrogen, oxygen, phosphorus or sulfur, n=0-4, R1, R2, R3, R4 and R5 are the same or different and can be none, hydrogen, any alkyl or any aryl groups) and wherein x+y=m, if m≠0 and A and B are uni-negatively charged groups or otherwise x+y=1 to 8.
A method of forming a thin oxide film comprising alternately delivering a solution-based metal precursor and an oxygen precursor to a substrate in the deposition chamber, wherein the metal precursor is a solid precursor dissolved in a solvent having a boiling point closely matched to that of the solid precursor and the metal precursor has the formula:
- AxByM(m)
- wherein M is a metal, m is the oxidation state of the metal M and is from 0 to 7, and A and B are the same or different and are selected from the group of chemical classes comprising a) cyclopentadienyl (Cp) and its derivatives (R1R2R3R4R5Cp;
- wherein R1, R2, R3, R4 and R5 are the same or different and can be hydrogen or alkyl [CnH2n+1, n=1-6]);
- b) primary, secondary or tertiary alkyl groups (CnH2n+1, n=1-12);
- c) cycloalkyl groups (CnR2n−1, n=3-12, wherein R is hydrogen or alkyl groups);
- d) cycloalkyldienes (CnR2n−4, n=4-12, wherein R is hydrogen or alkyl groups);
- e) benzene and its derivatives (R1R2R3R4R5R6C6;
- wherein R1, R2, R3, R4, R5 and R6 are the same or different and can be hydrogen or alkyl [CnH2n+1, n=1-6]);
- f) amides (R1R2N, wherein R1 and R2 are the same or different and can be hydrogen or alkyl [CnH2n+1, n=1-6]);
- and g) bidentate ligands (R1E1=C(R3)-[C(R4)=C(R5)]n-E2R2, wherein E1 and E2 are the same or different and can be nitrogen, oxygen, phosphorus or sulfur, n=0-4, R1, R2, R3, R4 and R5 are the same or different and can be none, hydrogen, any alkyl or any aryl groups) and wherein x+y=m, if m≠0 and A and B are uni-negatively charged groups or otherwise x+y=1 to 8.
A method of forming a thin nitride film comprising alternately delivering a solution-based metal precursor and a nitrogen precursor to a substrate in the deposition chamber, wherein the metal precursor is a solid precursor dissolved in a solvent having a boiling point closely matched to that of the solid precursor and the metal precursor has the formula:
- AxByM(m)
- wherein M is a metal, m is the oxidation state of the metal M and is from 0 to 7, and A and B are the same or different and are selected from the group of chemical classes comprising a) cyclopentadienyl (Cp) and its derivatives (R1R2R3R4R5Cp;
- wherein R1, R2, R3, R4 and R5 are the same or different and can be hydrogen or alkyl [CnH2n+1, n=1-6]);
- b) primary, secondary or tertiary alkyl groups (CnH2n+1, n=1-12);
- c) cycloalkyl groups (CnR2n−1, n=3-12, wherein R is hydrogen or alkyl groups);
- d) cycloalkyldienes (CnR2n−4, n=4-12, wherein R is hydrogen or alkyl groups);
- e) benzene and its derivatives (R1R2R3R4R5R6C6;
- wherein R1, R2, R3, R4, R5 and R6 are the same or different and can be hydrogen or alkyl [CnH2n+1, n=1-6]);
- f) amides (R1R2N, wherein R1 and R2 are the same or different and can be hydrogen or alkyl [CnH2n+1, n=1-6]);
- and g) bidentate ligands (R1E1=C(R3)−[C(R4)=C(R5)]n−E2R2, wherein E1 and E2 are the same or different and can be nitrogen, oxygen, phosphorus or sulfur, n=0-4, R1, R2, R3, R4 and R5 are the same or different and can be none, hydrogen, any alkyl or any aryl groups) and wherein x+y=m, if m≠0 and A and B are uni-negatively charged groups or otherwise x+y=1 to 8.
A thin film formed from a solution based metal precursor wherein the metal precursor is a solid precursor dissolved in a solvent having a boiling point closely matched to that of the solid precursor and the metal precursor has the formula:
- AxByM(m)
- wherein M is a metal, m is the oxidation state of the metal M and is from 0 to 7, and A and B are the same or different and are selected from the group of chemical classes comprising a) cyclopentadienyl (Cp) and its derivatives (R1R2R3R4R5Cp;
- wherein R1, R2, R3, R4 and R5 are the same or different and can be hydrogen or alkyl [CnH2n+1, n=1-6]);
- b) primary, secondary or tertiary alkyl groups (CnH2n+1, n=1-12);
- c) cycloalkyl groups (CnR2n−1, n=3-12, wherein R is hydrogen or alkyl groups);
- d) cycloalkyldienes (CnR2n−4, n=4-12, wherein R is hydrogen or alkyl groups);
- e) benzene and its derivatives (R1R2R3R4R5R6C6;
- wherein R1, R2, R3, R4, R5 and R6 are the same or different and can be hydrogen or alkyl [CnH2n+1, n=1-6]);
- f) amides (R1R2N, wherein R1 and R2 are the same or different and can be hydrogen or alkyl [CnH2n+1, n=1-6]);
- and g) bidentate ligands (R1E1=C(R3)−[C(R4)=C(R5)]n−E2R2, wherein E1 and E2 are the same or different and can be nitrogen, oxygen, phosphorus or sulfur, n=0-4, R1, R2, R3, R4 and R5 are the same or different and can be none, hydrogen, any alkyl or any aryl groups) and wherein x+y=m, if m≠0 and A and B are uni-negatively charged groups or otherwise x+y=1 to 8.
Dependencies are inferred from the claim text.