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US 8,709,958 B2Granted
Solid-state image pickup element, method of manufacturing the same, and image pickup apparatus including the same
AssigneeSony Corporation
InventorsItaru Oshiyama, Susumu Hiyama
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Abstract
An embodiment of the invention provides a solid-state image pickup element, including: a semiconductor layer having a photodiode, photoelectric conversion being carried out in the photodiode; a silicon oxide film formed on the semiconductor layer in a region having at least the photodiode by using plasma; and a film formed on the silicon oxide film and having negative fixed charges.
Claims8
A method of manufacturing a solid-state image pickup element, the method comprising the steps of:
- forming a photodiode in a silicon substrate;
- forming a silicon oxide film onto said photodiode, a plasma being used to form said silicon oxide film;
- and
- forming a first film onto said silicon oxide film, said silicon oxide film being in physical contact with said photodiode and said first film,
- wherein said first film is an oxide of a metal, an oxynitride of the metal, a nitride of the metal, or an oxide of a rare earth element.
2 more elements
Dependencies are inferred from the claim text.