Etching method, etching apparatus, and computer-readable recording medium
AssigneeTokyo Electron Limited
InventorAki Akiba
Life of this patent
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Abstract
Provided is an etching method capable of etching even a silicon film that is included in a multi-layered structure by using a resist film or an organic film as a mask, and also capable of integrally etching the silicon film and a silicon oxide film disposed under the silicon film. The etching method which etches the multi-layered structure including the silicon oxide film and the silicon film formed on the silicon oxide film, includes: integrally etching the silicon film and the silicon oxide film included in the multi-layered structure by using a resist film or an organic film as an etching mask and using an etching gas containing a CH2F2 gas as an etching gas, when the silicon film and the silicon oxide film in the multi-layered structure are etched.
Claims5
An etching method for etching a multi-layered structure including a silicon oxide film and a silicon film formed on the silicon oxide film, the etching method comprising:
- sequentially etching the silicon film and the silicon oxide film included in the multi-layered structure keeping an etching gas by using a resist film or an organic film as an etching mask and using an etching gas containing a CH2F2 gas as the etching gas, when the silicon film and the silicon oxide film in the multi-layered structure are etched.
An etching method for etching a multi-layered structure including a silicon oxide film, a silicon film formed on the silicon oxide film, and a silicon nitride film formed on the silicon film, the etching method comprising:
- sequentially etching the silicon nitride film, the silicon film, and the silicon oxide film included in the multi-layered structure keeping an etching gas by using a resist film or an organic film as an etching mask and using an etching gas containing a CH2F2 gas as the etching gas, when the silicon nitride film, the silicon film, and the silicon oxide film in the multi-layered structure are etched.
An etching method for etching a multi-layered structure including a first silicon oxide film, a silicon film formed on the first silicon oxide film, a silicon nitride film formed on the silicon film, and a second silicon oxide film formed on the silicon nitride film, the etching method comprising:
- sequentially etching the second silicon oxide film, the silicon nitride film, the silicon film, and the first silicon oxide film included in the multi-layered structure keeping an etching gas by using a resist film or an organic film as an etching mask and using an etching gas containing a CH2F2 gas as the etching gas, when the second silicon oxide film, the silicon nitride film, the silicon film, and the first silicon oxide film in the multi-layered structure are etched.
Dependencies are inferred from the claim text.