Method for forming pattern
AssigneeKabushiki Kaisha Toshiba
InventorYuji Kobayashi
Life of this patent
Estimating the term…
Abstract
A method for forming a pattern according to an embodiment, includes forming a first film pattern having a wide width dimension above a processed film; forming a second film pattern covering a portion of the first film pattern and a third film pattern connected to the second film pattern together above the processed film, the third film pattern having a width dimension narrower than the first film pattern, and to be a line pattern of a line and space pattern; forming a fourth film pattern on a side face of the first film pattern and a plurality of film patterns by the fourth film to be a line pattern of a line and space pattern on both side faces of the third film pattern; and removing the second film pattern and the third film pattern.
Claims20
A method for forming a pattern, comprising:
- forming a processed film above a substrate;
- forming a first film pattern having a wide width dimension above the processed film;
- forming a second film pattern covering a portion of the first film pattern and a third film pattern connected to the second film pattern together above the processed film, the third film pattern having a width dimension narrower than the first film pattern, and to be a line pattern of a line and space pattern;
- forming a fourth film conformally so as to cover a remaining portion of the first film pattern, the second film pattern, and the third film pattern;
- forming a film pattern by the fourth film on a side face of the first film pattern and a plurality of film patterns by the fourth film to be a line pattern of a line and space pattern on both side faces of the third film pattern, by etching the fourth film until a remaining portion surface of the first film pattern, a surface of the second film pattern, and a surface of the third film pattern are exposed;
- removing the second film pattern and the third film pattern;
- and
- etching the processed film by using the plurality of film patterns by the fourth film formed on the both side faces of the third film pattern and a wide pattern formed by combining the first film pattern and the film pattern by the fourth film formed on the side face of the first film pattern as masks.
A method for forming a pattern, comprising:
- forming two first convex patterns to be paired having a wide width dimension side by side in a first region above a substrate above which a conductive film is formed,
- forming second convex patterns on an outer side face of each of the two first convex patterns respectively and also two third convex patterns, each of which connected to one of the second convex patterns on the outer side face of the two first convex patterns, to be adjacent two line patterns of a line and space pattern in a second region above the substrate in a line width substantially a same width as the second convex patterns and narrower than a width dimension of the first convex patterns, and
- etching the conductive film in ways that allow the first, second, and third convex patterns to be transferred.
Dependencies are inferred from the claim text.