Method for forming contact hole
AssigneePowerchip Technology Corporation
InventorsMeng-Feng Tsai, Yi-Shiang Chang, Chia-Chi Lin, I-Hsin Chen, Chia-Ming Wu
Life of this patent
Estimating the term…
Loading patent…
AssigneePowerchip Technology Corporation
InventorsMeng-Feng Tsai, Yi-Shiang Chang, Chia-Chi Lin, I-Hsin Chen, Chia-Ming Wu
Estimating the term…
A method for forming contact holes includes following steps. A substrate including a dense region and an isolation region is provided. A material layer is formed on the substrate. Sacrificed patterns are formed on the material layer in the dense region, wherein there is a first opening between the two adjacent sacrificed patterns. A spacer is formed on each of two sides of each of the sacrificed patterns, wherein the spacers are separated from each other. The sacrificed patterns are removed to form a second opening between two adjacent spacers. A planar layer is formed to fill up the second openings. A first slit is formed in the planar layer, wherein the first slit exposes a portion of the material layer under the second openings. The portion of the material layer exposed by the first slit is removed to form third openings in the material layer.
A method for forming contact holes, comprising:
Dependencies are inferred from the claim text.