Methods of forming semiconductor devices having diffusion regions of reduced width
AssigneeMicron Technology, Inc.
InventorsLequn Liu, Yongjun Jeff Hu, Anish A. Khandekar
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Abstract
Semiconductor devices and methods for forming semiconductor devices are provided, including semiconductor devices that comprise one or more diffusion regions in a semiconductor, the one or more diffusion regions being adjacent to a gate formed adjacent to a surface of the semiconductor (e.g., a semiconductor substrate). The one or more diffusion regions comprise a first width at a depth below the surface of the semiconductor and a second width near the surface of the semiconductor, the second width of the one or more diffusion regions being less than about 40% greater than the first width.
Claims19
A method of forming a semiconductor device, comprising:
- implanting ions into a semiconductor, wherein at least one diffusion region is formed in the semiconductor, and wherein the at least one diffusion region is adjacent to a side of a gate formed adjacent to the semiconductor;
- forming an oxide over a surface of the semiconductor, including over the at least one diffusion region;
- forming a dielectric over the semiconductor and the oxide;
- annealing the dielectric with a temperature spike annealing process;
- forming at least one opening in the dielectric extending to the at least one diffusion region;
- and
- filling the at least one opening with a conductive material.
A method of forming a semiconductor device, comprising:
- forming diffusion regions in a semiconductor substrate;
- forming an oxide over the semiconductor substrate and the diffusion regions;
- forming a dielectric conformally over the oxide;
- and
- subjecting the dielectric and the semiconductor substrate to a temperature spike annealing process, wherein a peak temperature of the temperature spike annealing process is held for about two seconds or less, promoting grain growth within the semiconductor substrate, and inhibiting nucleation of new grains within the semiconductor substrate.
A method of forming a semiconductor device, comprising:
- forming a gate structure on a substrate;
- implanting ions into the substrate to form diffusion regions in the substrate adjacent to sides of the gate structure;
- forming an oxide over the substrate, the gate structure, and the diffusion regions;
- forming a dielectric material over the oxide, the gate structure, and the diffusion regions;
- annealing the dielectric material with a temperature spike annealing process;
- and
- forming a data line contact through the dielectric material and coupling at least some of the diffusion regions to conductive data lines of the semiconductor device.
Dependencies are inferred from the claim text.