Semiconductor fin device and method for forming the same using high tilt angle implant
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsShao-Ming Yu, Chang-Yun Chang
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Abstract
An angled implantation process is used in implanting semiconductor fins of a semiconductor device and provides for covering some but not necessarily all of semiconductor fins of a first type with patterned photoresist, and implanting using an implant angle such that all semiconductor fins of a second type are implanted and none of the semiconductor fins of the first type, are implanted. A higher tilt or implant angle is achieved due to the reduced portions of patterned photoresist, that are used.
Claims19
A method for implanting semiconductor fins in a semiconductor device using an angled implant with a high implant angle, said method comprising:
- providing a plurality of first semiconductor fins and a plurality of second semiconductor fins over a surface of a substrate;
- covering tops of some but not all of said first semiconductor fins with a masking material;
- and
- implanting using an angle of implantation such that all of said first semiconductor fins are blocked from implantation by said masking material and such that all said second semiconductor fins are implanted.
A method for implantation using a high implant angle with respect to a side surface of a fin in a semiconductor device, said method comprising:
- providing a wafer with a wafer surface, a plurality of first fins formed over said wafer surface and a plurality of second fins formed over said wafer surface;
- forming a photoresist pattern over said wafer, said photoresist pattern covering some but not all of said first fins wherein said first fins that are nearest said second fins are uncovered by said photoresist pattern and said second fins are not covered by said photoresist pattern;
- and
- implanting said second fins using an angled ion implant and controlling an angle of said angled implant such that none of said uncovered first fins are implanted during said implanting.
A method for implantation using a high implant angle with respect to a side surface of a fin in a semiconductor device, said method comprising:
- providing a wafer with a wafer surface, a plurality of uncovered fins formed over said wafer surface, a plurality of covered fins formed over said wafer surface and covered with photoresist and a partially covered fin;
- wherein said photoresist is formed in a pattern that includes an edge that lies over said partially covered fin;
- and
- implanting said uncovered fins using an angled ion implant and using an implant angle such that said partially covered fin and said uncovered fin adjacent said partially covered fin, are not implanted.
Dependencies are inferred from the claim text.