Method for conductivity control of (Al,In,Ga,B)N
AssigneeThe Regents of the University of California
InventorsJohn F. Kaeding, Hitoshi Sato, Michael Iza, Hirokuni Asamizu, Hong Zhong, Steven P. DenBaars, Shuji Nakamura
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Abstract
A method of controlled p-type conductivity in (Al,In,Ga,B)N semiconductor crystals. Examples include {10 11} GaN films deposited on {100} MgAl2O4 spinel substrate miscut in the <011> direction. Mg atoms may be intentionally incorporated in the growing semipolar nitride thin film to introduce available electronic states in the band structure of the semiconductor crystal, resulting in p-type conductivity. Other impurity atoms, such as Zn or C, which result in a similar introduction of suitable electronic states, may also be used.
Claims24
A method of fabricating a semipolar or nonpolar III-nitride semiconductor, comprising:
- controlling a p-type conductivity of the semipolar or nonpolar III-nitride semiconductor, by controlling a p-type carrier concentration and a hole mobility in the semipolar or nonpolar III-nitride semiconductor, wherein the p-type carrier concentration is approximately at least 10 percent of a p-type dopant concentration in the semipolar or nonpolar III-nitride semiconductor.
A method of fabricating a p-type III-nitride semiconductor, comprising:
- doping an acceptor impurity into a III-nitride semiconductor, wherein the III-nitride semiconductor is a nonpolar or semipolar III-nitride semiconductor;
- and
- performing a subsequent thermal annealing step, after doping an acceptor impurity into the III-nitride semiconductor, that alters a concentration of unintentional impurity atoms within the acceptor impurity doped III-nitride semiconductor, and results in an improvement in the conductivity of the acceptor impurity doped III-nitride semiconductor.
A method for fabricating a III-nitride device or semiconductor III-nitride, comprising:
- (a) fabricating the III-nitride device or semiconductor III-nitride using an acceptor impurity doped p-type semipolar or nonpolar III-nitride semiconductor;
- and
- (b) controlling a hole concentration and a hole mobility of the acceptor impurity doped p-type semipolar or nonpolar III-nitride semiconductor, thereby controlling a concentration of the acceptor impurity.
A semipolar or nonpolar III-nitride semiconductor, comprising:
- a p-type conductivity based on a controlled hole mobility and a p-type carrier concentration in the semipolar or nonpolar III-nitride semiconductor, wherein the p-type carrier concentration is approximately at least 10 percent of a p-type dopant concentration in the semipolar or nonpolar III-nitride semiconductor.
Dependencies are inferred from the claim text.