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US 8,709,924 B2Granted
Method for conformal plasma immersed ion implantation assisted by atomic layer deposition
AssigneeApplied Materials, Inc.
InventorsHiroji Hanawa, Seon-Mee Cho, Majeed A. Foad
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Abstract
Embodiments of the invention provide a novel apparatus and methods for forming a conformal doped layer on the surface of a substrate. A substrate is provided to a process chamber, and a layer of dopant source material is deposited by plasma deposition, atomic layer deposition, or plasma-assisted atomic layer deposition. The substrate is then subjected to thermal processing to activate and diffuse dopants into the substrate surface.
Claims7
A method of processing a substrate, comprising:
- (a) disposing the substrate in a process chamber;
- (b) providing a first precursor material to the process chamber, wherein the first precursor is a catalytic precursor selected from the group consisting of O2, O3, N2O, H2O2, NO, N2O5 alcohols organic and inorganic peroxides carboxylic acids radical oxygen compounds, and combinations thereof;
- (c) reacting the first precursor material to form a layer of the first precursor on the substrate;
- (d) providing a second precursor material to the process chamber wherein the second precursor is a dopant precursor;
- (e) reacting the second precursor material with the layer of the first precursor to form a dopant layer on the substrate;
- (f) repeating steps (b) - (e) in sequence until the dopant layer reaches a target thickness;
- and
- (g) diffusing the dopant layer into the substrate by heating the substrate.
5 more elements
A method of forming a doped region on a surface of a semiconductor substrate, comprising:
- (a) disposing the substrate in a process chamber;
- (b) providing a catalytic precursor to the process chamber, wherein the catalytic precursor is selected from the group consisting of O2, O3, N2O, H2O2, NO, N2O5, alcohols, organic and inorganic peroxides, carboxylic acids, radical oxygen compounds, and combinations thereof;
- (c) ionizing the catalytic precursor into a catalytic precursor plasma;
- (d) reacting the catalytic precursor plasma to form a layer of catalytic precursor on the substrate;
- (e) providing a purge gas to the process chamber;
- (f) providing a dopant precursor to the process chamber wherein the dopant precursor is selected from the group consisting of a boron compound, a phosphorus compound, an arsenic compound, a metal compound, a fluorine compound, or combinations thereof;
- (g) ionizing the dopant precursor into a dopant precursor plasma;
- (h) reacting the dopant precursor plasma to form a dopant layer on the substrate;
- (i) repeating operations (b)-(h) until the dopant layer reaches a target thickness;
- and
- (j) diffusing the dopant layer into the substrate by heating the substrate.
8 more elements
Dependencies are inferred from the claim text.