Method for forming a semiconductor device using selective epitaxy of group III-nitride

Abstract

A method for forming a single crystalline Group-III Nitride film. A substrate is provided, having a first passivation layer, a monocrystalline layer, and a second passivation layer. The substrate is patterned to form a plurality of features with elongated sidewalls having a second crystal orientation. Group-III Nitride films are formed on the elongated sidewalls, but not on the first or second passivation layers. In one embodiment, the dimensions of the patterned features and the film deposition process result in a single crystalline Group-III Nitride film having a third crystal orientation normal to the substrate surface. In another embodiment, the dimensions and orientation of the patterned features and the film deposition process result in a plurality of single crystalline Group-III Nitride films. In other embodiments, additional layers are formed on the Group-III Nitride film or films to form semiconductor devices, for example, a light-emitting diode.

Dependencies are inferred from the claim text.