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US 8,709,915 B2Granted
Method of manufacturing semiconductor device
OwnerTakeo Tsukamotoinventor
Life of this patent
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Abstract
A method of manufacturing a semiconductor device comprises: forming a protective film so as to cover at least a side edge of a substrate; forming a trench, which is annular in shape when viewed oppositely to a first principal surface of the substrate, on the first principal surface by etching using a photoresist pattern; and forming an insulating film so as to fill the trench, to form an insulating ring.
Claims20
A method of manufacturing a semiconductor device, comprising:
- forming a protective film, so as to cover a side edge of a substrate and a first principal surface of the substrate;
- removing the protective film formed on the first principal surface of the substrate such that the protective film remains on a whole of the side edge of the substrate;
- forming a trench, which is annular in shape when viewed oppositely to the first principal surface of the substrate, on the first principal surface by etching using a photoresist pattern;
- and
- forming an insulating film so as to fill the trench, to form an insulating ring.
2 more elements
A method of manufacturing a semiconductor device, comprising:
- forming a trench in a first principal surface of a substrate;
- bonding a supporting substrate, a side edge of which is covered with a protective film, onto the first principal surface of the substrate through an adhesion layer;
- and
- grinding the substrate from a side of a second surface of the substrate opposed to the first principal surface thereof in a thickness direction of the substrate and exposing a bottom of the trench,
- wherein a side surface of the substrate is uncovered with the protective film.
2 more elements
A method of manufacturing a semiconductor device, comprising:
- attaching a supporting substrate to a first principal surface of a wafer, the supporting substrate having a diameter larger than that of the wafer and including a side edge covered with a protective film, the wafer including a trench formed in the first principal surface thereof;
- and
- etching the wafer from a second principal surface opposed to the first principal and exposing the trench under a condition that the supporting substrate is attached to the wafer,
- wherein a side surface of the wafer is uncovered with the protective film.
1 more element
Dependencies are inferred from the claim text.