Semiconductor device manufacturing method and device for same

A method for manufacturing a semiconductor device, comprising the following steps in order:

• a step of forming an adhesive layer on one surface of a substrate for treatment;
• a step of forming a photothermal conversion layer on one surface of a supporting substrate having a surface with an outer shape larger than that of the surface of the substrate for treatment;
• a step of bonding the substrate for treatment onto the surface of the photothermal conversion layer with the adhesive layer interposed, to obtain a layered member;
• a step of performing, for the layered member, treatment on the surface of the substrate for treatment on the side opposite the surface bonded with the supporting substrate, wherein the surface of the substrate for treatment is treated by grinding, etching or a combination of grinding and etching;
• a step of removing, from the layered member, a portion of the photothermal conversion layer that protrudes from the substrate for treatment, and cleaning a portion of the supporting substrate exposed by removal of the photothermal conversion layer, during the step of performing treatment on the surface of the substrate for treatment on the side opposite the bonded surface, wherein the photothermal conversion layer is removed by directing alkaline aqueous solution toward a peripheral edge of said supporting substrate;
• and
• a step of separating the substrate for treatment from the adhesive layer after treatment of the surface on the side opposite the bonded surface is completed, by irradiating the photothermal conversion layer with light to perform thermal decomposition of the photothermal conversion layer.