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US 8,709,910 B2Granted
Semiconductor process
AssigneeUnited Microelectronics Corp.
InventorsChin-I Liao, Chia-Lin Hsu, Yung-Lun Hsieh, Chien-Hao Chen, Bo-Syuan Lee, Min-Chung Cheng
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Abstract
A semiconductor process includes the following steps. A semiconductor substrate is provided. The semiconductor substrate has a patterned isolation layer and the patterned isolation layer has an opening exposing a silicon area of the semiconductor substrate. A silicon rich layer is formed on the sidewalls of the opening. An epitaxial process is performed to form an epitaxial structure on the silicon area in the opening.
Claims18
A semiconductor process, comprising:
- providing a semiconductor substrate, wherein the semiconductor substrate has a fin-shaped structure and a patterned isolation layer and an opening of the patterned isolation layer exposes a silicon area which is the top surface of the fin-shaped structure;
- forming a silicon rich layer on the sidewalls of the opening;
- and
- performing an epitaxial process to form an epitaxial structure on the silicon area in the opening.
1 more element
Dependencies are inferred from the claim text.