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US 8,709,907 B2Granted
Method for manufacturing and reoxidizing a TiN/Ta2O5/TiN capacitor
AssigneeSTMicroelectronics (Crolles 2) SAS
InventorMickael Gros-Jean
Life of this patent
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Abstract
A method for manufacturing a TiN/Ta2O5/TiN capacitor, including the steps of forming a Ta2O5 layer on a TiN support by a plasma-enhanced atomic layer deposition method, or PEALD; and submitting the obtained structure to an N2O plasma for a duration sufficient to oxidize the Ta2O5 layer without oxidizing the TiN support.
Claims7
A method for manufacturing a TiN/Ta2O5/TiN capacitor, comprising the steps of:
- forming a Ta2O5 layer on a TiN support by a plasma-enhanced atomic layer deposition method, or PEALD;
- and
- submitting the obtained structure to an N2O plasma for a duration sufficient to oxidize the Ta2O5 layer without oxidizing the TiN support.
A TiN/Ta2O5/TiN capacitor wherein the interface area between the TiN support layer and the Ta2O5 layer has a thickness smaller than 2 nm.
Dependencies are inferred from the claim text.