Double diffused metal oxide semiconductor device and manufacturing method thereof
AssigneeRichtek Technology Corporation, R.O.C.
InventorsChing-Yao Yang, Tsung-Yi Huang, Huan-Ping Chu, Hung-Der Su
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Abstract
The present invention discloses a double diffused metal oxide semiconductor (DMOS) device and a manufacturing method thereof. The DMOS device includes: an isolation structure for defining device regions; a gate with a ring-shaped structure; a drain located outside the ring; and a lightly doped drain, a source, and a body electrode located inside the ring. To increase the sub-threshold voltage at the corners of the gate, the corners are located completely on the isolation structure, or the lightly doped drain is apart from the corners by a predetermined distance.
Claims3
A method of manufacturing a double diffused metal oxide semiconductor (DMOS) device, comprising:
- providing a substrate in which an isolation structure is formed for defining a first device region and a second device region;
- forming a gate on the substrate, the gate having a ring-shaped structure located along a boundary of the first device region, wherein the ring-shaped structure is completely or partially inside the first device region from top view;
- forming a body region in the first device region in an area defined by the ring-shaped structure, the body region being doped with first conductive type impurities;
- forming a lightly doped drain in the body region, the lightly doped drain being doped with second conductive type impurities;
- forming a source in the body region, interior of the lightly doped drain, the source being doped with the second conductive type impurities;
- forming a body electrode in the body region, interior of the source, the body electrode being doped with the first conductive type impurities;
- and
- forming a drain in the second device region;
- wherein the lightly doped drain is apart from corners of the ring-shaped structure by a predetermined distance.
Dependencies are inferred from the claim text.