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US 8,709,894 B2Granted
3D structured memory devices and methods for manufacturing thereof
AssigneeMicron Technology, Inc.
InventorsKi Hong Lee, Seung Ho Pyi, Il Young Kwon, Jin Ho Bin
Life of this patent
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Abstract
A 3D structured nonvolatile semiconductor memory devices and methods for manufacturing are disclosed. One such device includes an n+ region at a source/drain region; a p+ region at the source/drain region; and a diffusion barrier material between the n+ region and the p+ region. The n+ region is substantially isolated from the p+ region.
Claims6
A method of forming a n+ region and a p+ region at a source/drain region, the method comprising:
- forming a n+ doped region over an undoped channel material in a recess;
- removing a horizontal portion of the n+ region in the recess to expose a surface of the undoped channel material;
- forming a diffusion barrier material over the exposed surface of the undoped channel material and the n+ region in the recess;
- removing a horizontal portion of the diffusion barrier material in the recess to expose the upper surface of the undoped channel material;
- and
- forming a p+ region adjacent to the diffusion barrier material in the recess.
3 more elements
Dependencies are inferred from the claim text.