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US 8,709,891 B2Granted
Method and system for utilizing Perovskite material for charge storage and as a dielectric
Assignee4D-S, Ltd.
InventorsZhida Lan, Dongmin Chen
Life of this patent
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Abstract
Memory devices and methods for providing the memory devices are provided. The memory devices utilize multiple metal oxide layers. The methods for providing the memory devices can include providing a transistor; producing a capacitor that includes metal layers and metal oxide layers; connecting the capacitor to a side of the transistor; and providing a wordline, bitline, and driveline through connection with the transistor or the capacitor.
Claims10
A method for providing a memory, comprising
- providing a transistor;
- producing a capacitor by:
- providing a first metal layer;
- sputtering a first metal oxide layer onto the first metal layer;
- and
- providing a second metal oxide layer and a second metal layer on the first metal oxide layer;
- connecting the capacitor to a side of the transistor;
- providing a wordline, connected to a gate of the transistor;
- providing a bitline, connected to a side of the transistor not connected to the capacitor;
- and
- providing a driveline, connected to the capacitor,
- wherein Gibbs free energy for formation of the second metal oxide layer is lower than Gibbs free energy for formation of the first metal oxide layer.
9 more elements
Dependencies are inferred from the claim text.