Back to results
US 8,709,887 B2Granted
Method for fabricating a nitrided silicon-oxide gate dielectric
AssigneeInternational Business Machines Corporation
InventorsJay S. Burnham, James S. Nakos, James J. Quinlivan, Bernie Roque, Jr., Steven M. Shank, Beth A. Ward
Life of this patent
Estimating the term…
Abstract
A method of fabricating a gate dielectric layer. The method includes: providing a substrate; forming a silicon dioxide layer on a top surface of the substrate; performing a plasma nitridation in a reducing atmosphere to convert the silicon dioxide layer into a silicon oxynitride layer. The dielectric layer so formed may be used in the fabrication of MOSFETs.
Claims18
A method of fabricating a MOSFET, comprising:
- forming a silicon dioxide layer on a top surface of a semiconductor substrate, said semiconductor substrate having at least an uppermost silicon layer;
- after said forming said silicon dioxide layer, performing a plasma nitridation in a reducing atmosphere to convert said silicon dioxide layer into a silicon oxynitride layer;
- forming a polysilicon gate on said silicon oxynitride layer aligned over a channel region in said semiconductor substrate;
- and
- forming source/drain regions in said semiconductor substrate, said source drain regions aligned to said polysilicon gate.
2 more elements
Dependencies are inferred from the claim text.