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US 8,709,886 B2Granted
Compound semiconductor device and manufacturing method therefor
AssigneeFujitsu Limited
InventorsKozo Makiyama, Naoya Okamoto, Toshihiro Ohki, Yuichi Minoura, Shirou Ozaki, Toyoo Miyajima
Life of this patent
Estimating the term…
Abstract
An HEMT includes, on an SiC substrate, a compound semiconductor layer, a silicon nitride (SiN) protective film having an opening and covering the compound semiconductor layer, and a gate electrode formed on the compound semiconductor layer so as to plug the opening. In the protective film, a projecting portion projecting from a side surface of the opening is formed at a lower layer portion 6a.
Claims6
A method for manufacturing a compound semiconductor device, the method comprising:
- forming a silicon nitride protective film on a compound semiconductor layer;
- forming an opening in the protective film;
- and
- forming an electrode on the compound semiconductor layer so as to plug the opening,
- wherein the forming the opening comprises forming the opening such that a lower layer portion of the protective film includes a projecting portion projecting from a side surface of the opening, and
- wherein the protective film is formed such that the percentage of nitrogen vacancies of the lower layer portion is higher than the percentage of nitrogen vacancies of silicon nitride in stoichiometric condition and such that the protective film continuously approaches stoichiometric condition toward a top.
3 more elements
Dependencies are inferred from the claim text.