Schottky diode and method of manufacture
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsGeorgios Vellianitis, Gilberto Curatola, Kyriaki Fotopoulou, Nader Akil
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Abstract
A method of manufacturing Schottky diodes in a CMOS process includes forming wells, including first wells (16) for forming CMOS devices and second wells (18) for forming Schottky devices. Then, transistors are formed in the first wells, the second wells protected with a protection layer (20) and suicide contacts (40) formed to source and drain regions in the first wells. The protection layer is then removed, a Schottky material deposited and etched away except in a contact region in each second well to form a Schottky contact between the Schottky material (74) and each second well (18).
Claims18
A method of manufacturing a semiconductor device including a plurality of transistors in a first region and a Schottky device in a second region, the method comprising:
- forming a plurality of n-type doped wells and p-type doped wells in the first region and a plurality of n-type doped wells and p-type doped wells in the second region;
- depositing a protection layer on the exposed semiconductor of each well in the second region;
- forming a silicide on the transistor wells of the first region by depositing a silicidation metal over the surface, annealing to form a silicide of the silicidation metal and removing the silicidation metal leaving the silicide;
- removing the protection layer of each well in the second region;
- depositing a Schottky material over the surface including exposed semiconductor of each well in the second region;
- and
- etching away the Schottky material except in a contact region in the well or wells in the second region to form a Schottky contact between the Schottky material and the well or wells in the second region.
Dependencies are inferred from the claim text.