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US 8,709,884 B2Granted
Hybrid fin field-effect transistor structures and related methods
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorMatthew T. Currie
Life of this patent
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Abstract
Semiconductor-on-insulator structures facilitate the fabrication of devices, including MOSFETs that are at least partially depleted during operation and FinFETs including bilayer fins and/or crystalline oxide.
Claims19
A method for forming a structure, the method comprising:
- providing a substrate having an insulator layer disposed thereon, and a bilayer disposed in contact with the insulator layer, the bilayer including a second semiconductor layer disposed over a first semiconductor layer;
- and
- thereafter forming a fin field-effect transistor on the substrate by:
- patterning the bilayer to define a source region, a drain region, and at least one fin disposed between the source and the drain regions,
- forming a gate dielectric layer at least a portion of which is disposed over the fin, and
- forming a gate over the gate dielectric layer portion disposed over the fin, wherein a thickness of the first semiconductor layer is greater than a thickness of the second semiconductor layer such that a sidewall of the fin is primarily defined by the first semiconductor layer.
3 more elements
A method comprising:
- providing a substrate having an insulator layer and a bilayer disposed wholly over a top surface of the insulator layer, the bilayer including a second semiconductor layer disposed over a first semiconductor layer, each of the first semiconductor layer and the second semiconductor layer comprising a strain;
- and
- thereafter forming a fin field-effect transistor on the substrate by:
- patterning the bilayer to define a source region, a drain region, and at least one fin disposed between the source and the drain regions,
- forming a gate dielectric layer at least a portion of which is disposed over the fin, and
- forming a gate over the gate dielectric layer portion disposed over the fin.
3 more elements
A method comprising:
- providing a substrate comprising an insulator layer and a first semiconductor layer over the insulator layer, the first semiconductor layer comprising a strain;
- forming a second semiconductor layer over at least a portion of the first semiconductor layer;
- after forming the second semiconductor layer, patterning the first semiconductor layer and the second semiconductor layer to define a fin, the fin comprising the second semiconductor layer;
- forming a gate dielectric layer at least a portion of which is disposed over the fin;
- and
- forming a gate over the gate dielectric layer portion disposed over the fin.
3 more elements
Dependencies are inferred from the claim text.