Method for fabrication of a semiconductor device and structure

A method of manufacturing semiconductor devices:

• providing a first device comprising a first die and a second die, wherein said first die is diced from a first wafer and said second die is diced from a second wafer and said first die is connected to said second die using at least one through-silicon-via (TSV);
• providing a second device comprising a third die and a fourth die, wherein said third die is diced from a third wafer and said fourth die is diced from a fourth wafer and said third die is connected to said fourth die using at least one through-silicon-via (TSV);
• wherein said first die comprises a first functionality and said third die comprises a second functionality,
• wherein said first functionality is different than said second functionality,
• wherein a majority of the masks used for processing said first wafer and said third wafer are the same;
• and
• wherein said second die size is substantially different than said fourth die size.

A method of manufacturing semiconductor devices:

• providing a first device comprising a first die and a second die, wherein said first die is diced from a first wafer and said second die is diced from a second wafer and said first die is connected to said second die using at least one through-silicon-via (TSV);
• providing a second device comprising a third die and a fourth die, wherein said third die is diced from a third wafer and said fourth die is diced from a fourth wafer and said third die is connected to said fourth die using at least one through-silicon-via (TSV);
• wherein said second die comprises an I/O die for the connection of said device to external devices,
• wherein said first die comprises a first functionality and said third die comprises a second functionality,
• wherein said first functionality is different than said second functionality,
• wherein a majority of the masks used for processing said first wafer and said third wafer are the same;
• wherein said second die comprises a first amount of logic, or device input-output cells or memory, and
• wherein said fourth die comprises a second amount of logic, or device input-output cells or memory, said second amount is substantially different than said first amount.

A method of manufacturing semiconductor devices:

• providing a first device comprising a first die and a second die, wherein said first die is diced from a first wafer and said second die is diced from a second wafer and said first die is connected to said second die using at least one through-silicon-via (TSV);
• providing a second device comprising a third die and a fourth die, wherein said third die is diced from a third wafer and said fourth die is diced from a fourth wafer and said third die is connected to said fourth die using at least one through-silicon-via (TSV);
• wherein said second die comprises a memory die,
• wherein said first die comprises a first functionality and said third die comprises a second functionality,
• wherein said first functionality is different than said second functionality,
• wherein a majority of the masks used for processing said first wafer and said third wafer are the same;
• and
• wherein said second die size is substantially different than said fourth die size.