Antimony and germanium complexes useful for CVD/ALD of metal thin films

A method of fabricating a phase-change non-volatile memory device structure including a germanium alloy, said method comprising forming a germanium alloy on a substrate, wherein the germanium component of said germanium alloy is deposited on said substrate by vapor deposition of germanium from a germanium amidinate precursor, wherein the germanium amidinate precursor includes Ge(II) or Ge(IV), and at least one amidinate ligand of the formula [RNCXNR]— wherein each R is independently selected from H, C1-C6 alkyl, C3-C10 cycloalkyl, C6-C13 aryl, and —Si(R′)3 wherein each R′ is independently selected from C1-C6 alkyl, and X is selected from among H, C1-C6 alkyl, C1-C6 alkoxy, —NR1R2, and —C(R3)3, wherein each of R1, R2 and R3 is independently selected from H, C1-C6 alkyl, C3-C10 cycloalkyl, C6-C13 aryl, and —Si(R4)3 wherein each R4 is independently selected from C1-C6 alkyl, and wherein non-amidinate ligand(s) are selected from alkyl, alkoxy, dialkylamino, hydrido, —Si(R4)3 and halogen groups.