Method for manufacturing photoelectric conversion device
AssigneeKYOCERA Corporation
InventorsShintaro Kubo, Rui Kamada, Yusuke Miyamichi, Shuji Nakazawa
Life of this patent
Estimating the term…
Abstract
The object is to improve the conversion efficiency of a photoelectric conversion device. This object can be achieved by a photoelectric conversion device including an electrode and a semiconductor layer which is provided on one main surface of the electrode and contains a I-III-VI group compound semiconductor, wherein the semiconductor layer includes a connection layer that is located at a position on the one main surface side of the electrode and has a tendency that, the closer to the one main surface, the greater a quotient obtained by dividing an amount of substance of a I-B group element by an amount of substance of a III-B group element becomes.
Claims1
A method for manufacturing a photoelectric conversion device comprising:
- preparing a solution containing a Lewis base organic compound, an organic compound containing a chalcogen element, a I-B group element and a III-B group element;
- applying the solution onto one main surface of an electrode so as to form a coat containing the I-B group element and the III-B group element thereon;
- and
- heating the coat in a temperature range from 100° C. or more to 400° C. or less so as to form a semiconductor layer including a connection layer that is located on the one main surface side, and has a tendency that, the closer to the one main surface, the greater a quotient obtained by dividing an amount of substance of a I-B group element by an amount of substance of a III-B group element becomes, and containing a I-III-VI group compound semiconductor.
Dependencies are inferred from the claim text.