Method of manufacturing crystalline silicon solar cells with improved surface passivation
AssigneeEcn Energieonderzoek Centrum Nederland
InventorsYuji Komatsu, Lambert Johan Geerligs, Valentin Dan Mihailetchi
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AssigneeEcn Energieonderzoek Centrum Nederland
InventorsYuji Komatsu, Lambert Johan Geerligs, Valentin Dan Mihailetchi
Estimating the term…
The present invention provides a method of manufacturing a crystalline silicon solar cell, comprising: —providing a crystalline silicon substrate having a front side and a back side; —forming a thin silicon oxide film on at least one of the front and the back side by soaking the crystalline silicon substrate in a chemical solution; —forming a dielectric coating film on the thin silicon oxide film on at least one of the front and the back side. The thin silicon oxide film may be formed with a thickness of 0.5-10 nm. By forming a oxide layer using a chemical solution, it is possible to form a thin oxide film for surface passivation wherein the relatively low temperature avoids deterioration of the semiconductor layers.
A method of manufacturing a crystalline silicon solar cell, comprising:
A method of manufacturing a crystalline silicon solar cell, comprising:
Dependencies are inferred from the claim text.