Method of fabricating display device

A method of fabricating a display device comprising the steps of:

• forming a pixel electrode over a substrate, a part of the pixel electrode covered by a base film;
• forming a semiconductor film over the base film;
• forming a gate insulating film over the semiconductor film;
• forming a gate electrode over the gate insulating film;
• forming an impurity region in the semiconductor film;
• forming a first insulating nitride film over the gate electrode;
• forming an acrylic film over the first insulating nitride film;
• forming a first opening portion in the acrylic film over the impurity region;
• forming a second insulating nitride film to cover the first opening portion;
• etching the second insulating nitride film, the first insulating nitride film and the gate insulating film at a bottom face of the first opening portion to form a second opening portion,
• forming a wiring over the second insulating nitride film and connecting the impurity region and the wiring through the first opening portion and the second opening portion,
• wherein in forming the first opening portion, the acrylic film is etched over the pixel electrode,
• wherein in forming the second opening portion, the pixel electrode is exposed by etching the second insulating nitride film, the first insulating nitride film, the gate insulating film and the base film are etched so that the pixel electrode is exposed and the pixel electrode and the wiring are electrically connected to each other after the pixel electrode is exposed.

A method of fabricating a display device comprising the steps of

• forming a pixel electrode over a substrate;
• forming a base film over a part of the pixel electrode;
• forming a semiconductor film over a part of the base film;
• forming a gate insulating film over the semiconductor film;
• forming a gate electrode over the gate insulating film;
• forming an impurity region in the semiconductor film;
• forming a first insulating nitride film over the gate electrode;
• forming an organic resin film over the first insulating nitride film;
• forming a first opening portion in the organic resin film over the impurity region;
• forming a second insulating nitride film to cover the first opening portion;
• etching the second insulating nitride film, the first insulating nitride film and the gate insulating film at a bottom face of the first opening portion to form a second opening portion;
• forming a wiring over the second insulating nitride film and connecting the impurity region and the wiring through the first opening portion and the second opening portion:
• wherein in forming the first opening portion, the organic resin film is etched over the pixel electrode;
• wherein in forming the second opening portion, the second insulating nitride film, the first insulating nitride film, the gate insulating film and the base film are etched so that the pixel electrode is exposed and the pixel electrode and the wiring are electrically connected to each other after the pixel electrode is exposed.