Solid state lighting devices and associated methods of manufacturing
AssigneeMicron Technology, Inc.
InventorsNiraj Rana, Zaiyuan Ren
Life of this patent
Estimating the term…
Abstract
Solid state lighting devices and associated methods of manufacturing are disclosed herein. In one embodiment, a solid state light device includes a light emitting diode with an N-type gallium nitride (GaN) material, a P-type GaN material spaced apart from the N-type GaN material, and an indium gallium nitride (InGaN) material directly between the N-type GaN material and the P-type GaN material. At least one of the N-type GaN, InGaN, and P-type GaN materials has a non-planar surface.
Claims20
A method for processing a silicon substrate, comprising:
- forming a solid state lighting (SSL) structure on a substrate, the substrate having a substrate material with a Si(1,0,0) lattice orientation, wherein the SSL structure includes an N-type gallium nitride (GaN) material, an indium gallium nitride (InGaN) material, and a P-type GaN material, and wherein at least one of the N-type GaN, InGaN, and P-type GaN materials has a non-planar surface with a plurality of symmetric protrusions extending along a Si(1,1,1) plane, and wherein the symmetric protrusions are formed with tips, and wherein the symmetric protrusions at least partially reduce a total tensile stress among the N-type GaN, InGaN, and P-type GaN materials by at least partially canceling opposite tensile stresses at the tips along the non-planar surface;
- forming a first contact electrically coupled to the P-type GaN;
- and
- forming a second contact electrically coupled to the N-type GaN.
A method of manufacturing a microelectronic assembly, comprising:
- forming a silicon substrate having a surface with a plurality of indentations, the silicon substrate having a Si(1,0,0) lattice orientation at the surface, wherein the indentations are defined by at least one plane with a Si(1,1,1) lattice orientation;
- and
- forming a solid-state lighting (SSL) structure carried by the silicon substrate, the SSL structure having an N-type gallium nitride (GaN) material, a P-type GaN material spaced apart from the N-type GaN material, and an indium gallium nitride (InGaN) material between the N-type GaN material and the P-type GaN material, wherein at least one of the N-type GaN, InGaN, and P-type GaN materials has a non-planar surface with a plurality of symmetric protrusions formed with tips, and wherein the symmetric protrusions at least partially reduce a total tensile stress among the N-type GaN, InGaN, and P-type GaN materials by at least partially canceling opposite tensile stresses at the tips along the non-planar surface.
A method for processing a silicon substrate, comprising:
- forming a light emitting diode (LED) structure on a substrate, the substrate having a substrate material with a Si(1,0,0) lattice orientation, wherein forming the LED structure includes depositing an N-type gallium nitride (GaN) material, an indium gallium nitride (InGaN) material, and a P-type GaN in sequence and coalescing at least one of the N-type GaN, InGaN, and P-type GaN materials during deposition, and wherein the coalescing reduces a dislocation density in at least one of the N-type GaN, InGaN, and P-type GaN materials by at least partially canceling opposite tensile stresses along at least one non-planar surface of the N-type GaN, InGaN, and P-type GaN materials;
- forming a first contact electrically coupled to the P-type GaN;
- and
- forming a second contact electrically coupled to the N-type GaN.
Dependencies are inferred from the claim text.