Method of fabricating semiconductor light emitting device
AssigneeSamsung Electronics Co., Ltd.
InventorsJong Hyun Lee, Dong Ju Lee, Young Sun Kim
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Abstract
There is provided a method of fabricating a semiconductor light emitting device, including: forming a sacrificial layer having a plurality of nanostructures on a growth substrate; forming a protective layer to cover the sacrificial layer; forming a light emitting structure by allowing a first conductive semiconductor layer, an active layer and a second conductive semiconductor layer to be sequentially grown on the protective layer; etching the protective layer to expose the nanostructures; and separating the light emitting structure from the growth substrate by etching the exposed nanostructures, whereby damage and degradation of a light emitting structure at the time of the separation thereof may be prevented.
Claims20
A method of fabricating a semiconductor light emitting device, the method comprising:
- forming a sacrificial layer having a plurality of nanostructures on a growth substrate;
- forming a protective layer to cover an upper surface and side surfaces of the sacrificial layer, wherein the protective layer is not formed in spaces between adjacent nanostructures;
- forming a light emitting structure including a semiconductor layer of a first conductivity type, an active layer, and a semiconductor layer of a second conductivity type that are sequentially grown on the protective layer;
- etching the protective layer to expose the nanostructures in at least one side surface of the sacrificial layer;
- and
- separating the light emitting structure from the growth substrate by etching the exposed nanostructures.
A method of fabricating a semiconductor light emitting device, the method comprising:
- forming a sacrificial layer having a plurality of nanostructures on a growth substrate;
- forming a protective layer to cover the sacrificial layer;
- forming a light emitting structure including a semiconductor layer of a first conductivity type, an active layer, and a semiconductor layer of a second conductivity type that are sequentially grown on the protective layer:
- etching the protective layer to expose the nanostructures:
- and
- separating the light emitting structure from the growth substrate by etching the exposed nanostructures,
- wherein the growth substrate has an upper surface divided into a first region on an edge of the growth substrate and a second region defined as a region of the upper surface excepting the first region, and the forming of the sacrificial layer is only performed to form a plurality of nanostructures on the second region of the growth substrate, and
- wherein the etching of the protective layer to expose the nanostructures is performed to etch the protective layer positioned on the first region so as to expose a side surface of the nanostructures.
Dependencies are inferred from the claim text.