Measuring current and resistance using combined diodes/resistor structure to monitor integrated circuit manufacturing process variations

A method comprising:

• partitioning an integrated circuit structure into a set of discrete partitions, using a computerized machine;
• forming a plurality of diode/resistor devices within each of said partitions using manufacturing equipment operatively connected to said computerized machine, each of said diode/resistor devices comprising a diode device and a resistor device integrated into a single structure;
• measuring resistance of each of said diode/resistor devices during testing of said integrated circuit structure using testing equipment operatively connected to said computerized machine;
• measuring current through each of said diode/resistor devices during testing of said integrated circuit structure using said testing equipment;
• computing median resistance and median current for each of said partitions based on said resistance and said current for each of said diode/resistor devices within each of said partitions, using said computerized machine;
• computing, using said computerized machine, response curves for said median resistance and said median current as a function at least one of:
• variations of characteristics of transistor devices within said integrated circuit structure including at least one of gate length variation and spacer size variation;
• and
• variations of manufacturing processes of said transistor devices within said integrated circuit structure including at least one of rapid thermal anneal variations, and implant variations.

A method comprising:

• partitioning an integrated circuit structure into a set of discrete partitions, using a computerized machine;
• forming a plurality of diode/resistor devices within each of said partitions using manufacturing equipment operatively connected to said computerized machine, each of said diode/resistor devices comprising a diode device and a resistor device integrated into a single structure;
• measuring resistance of each of said diode/resistor devices during testing of said integrated circuit structure using testing equipment operatively connected to said computerized machine;
• measuring current through each of said diode/resistor devices during testing of said integrated circuit structure using said testing equipment;
• computing median resistance and median current for each of said partitions based on said resistance and said current for each of said diode/resistor devices within each of said partitions, using said computerized machine;
• computing, using said computerized machine, response curves for said median resistance and said median current as a function at least one of:
• variations of characteristics of transistor devices within said integrated circuit structure;
• and
• variations of manufacturing processes of said transistor devices within said integrated circuit structure.