Pattern forming method using developer containing organic solvent and rinsing solution for use in the pattern forming method
AssigneeFUJIFILM Corporation
InventorsSou Kamimura, Shinji Tarutani
Life of this patent
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Abstract
A pattern forming method, includes: (i) a step of forming a resist film from a resist composition for organic solvent-based development, the resist composition containing (A) a resin capable of increasing a polarity by an action of an acid to decrease a solubility in an organic solvent-containing developer and (B) a compound capable of generating an acid upon irradiation with an actinic ray or radiation; (ii) an exposure step; (iii) a development step using an organic solvent-containing developer; and (iv) a washing step using a rinsing solution, wherein in the step (iv), a rinsing solution containing at least either the solvent S1 or S2 as defined in the specification is used.
Claims20
A pattern forming method, comprising:
- (i) a step of forming a resist film from a resist composition for organic solvent-based development, the resist composition containing (A) a resin capable of increasing the polarity of the resin (A) by an action of an acid to decrease the solubility of the resin (A) in an organic solvent-containing developer, (B) a compound capable of generating an acid upon irradiation with an actinic ray or radiation, and (C) a solvent;
- (ii) an exposure step;
- (iii) a development step using an organic solvent-containing developer;
- and
- (iv) a washing step using a rinsing solution,
- wherein in the step (iv), a rinsing solution containing at least the following solvent S2 is used:
- Solvent S2 is a dialkyl ether having at least either an alkyl group having a carbon number of from 5 to 8 or a cycloalkyl group having a carbon number of from 5 to 8.
A pattern forming method, comprising:
- (i) a step of forming a resist film from a resist composition for organic solvent-based development, the resist composition containing (A) a resin capable of increasing the polarity of the resin (A) by an action of an acid to decrease the solubility of the resin (A) in an organic solvent-containing developer, (B) a compound capable of generating an acid upon irradiation with an actinic ray or radiation, and (C) a solvent;
- (ii) an exposure step;
- (iii) a development step using an organic solvent-containing developer;
- and
- (iv) a washing step using a rinsing solution,
- wherein in the step (iv), a rinsing solution containing both the following solvent S1 and the solvent S2 is used:
- Solvent S1 is an alcohol having a carbon number of at least 5 and having an alkyl chain containing at least either a branched or cyclic structure, with a secondary or tertiary carbon atom in the alkyl chain being bonded to a hydroxyl group;
- and
- Solvent S2 is a dialkyl ether having at least either an alkyl group having a carbon number of at least 5 or a cycloalkyl group having a carbon number of at least 5;
- wherein the rinsing solution satisfies the condition that the ratio by mass of solvent S1/solvent S2 is from 50/50 to 80/20.
A pattern forming method, comprising:
- (i) a step of forming a resist film from a resist composition for organic solvent-based development, the resist composition containing (A) a resin capable of increasing the polarity of the resin (A) by an action of an acid to decrease the solubility of the resin (A) in an organic solvent-containing developer, (B) a compound capable of generating an acid upon irradiation with an actinic ray or radiation, and (C) a solvent;
- (ii) an exposure step;
- (iii) a development step using an organic solvent-containing developer;
- and
- (iv) a washing step using a rinsing solution,
- wherein in the step (iv), a rinsing solution containing at least the following solvent S1 is used:
- Solvent S1 is any one of 3-methyl-2-pentanol, 3-methyl-3-pentanol, 4-methyl-2-pentanol, 4-methyl-3-pentanol and
- 2-methyl-2-pentanol.
A rinsing solution for organic solvent-based development, which is used for a resist composition for organic solvent-based development, the rinsing solution comprising at least the following solvent S2:
- Solvent S2 is a dialkyl ether having at least either an alkyl group having a carbon number of from 5 to 8 or a cycloalkyl group having a carbon number of from 5 to 8.
A rinsing solution for organic solvent-based development, which is used for a resist composition for organic solvent-based development, the rinsing solution comprising both the following solvent S1 and the solvent S2:
- Solvent S1 is an alcohol having a carbon number of at least 5 and having an alkyl chain containing at least either a branched or cyclic structure, with a secondary or tertiary carbon atom in the alkyl chain being bonded to a hydroxyl group;
- and
- Solvent S2 is a dialkyl ether having at least either an alkyl group having a carbon number of at least 5 or a cycloalkyl group having a carbon number of at least 5;
- and satisfying the condition that the ratio by mass of solvent S1/solvent S2 is from 50/50 to 80/20.
A rinsing solution for organic solvent-based development, which is used for a resist composition for organic solvent-based development, the rinsing solution comprising at least the following solvent S1:
- Solvent S1 is any one of 3-methyl-2-pentanol, 3-methyl-3-pentanol, 4-methyl-2-pentanol, 4-methyl-3-pentanol and 2-methyl-2-pentanol.
Dependencies are inferred from the claim text.