Magnetic memory element, driving method for same, and nonvolatile storage device
AssigneeFuji Electric Co., Ltd.
InventorsYasushi Ogimoto, Haruo Kawakami
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Abstract
In accordance with one aspect of the invention, a magnetic memory element records information in a spin valve structure having a free layer, a pinning layer, and a nonmagnetic layer sandwiched therebetween. The magnetic memory element further has, on the free layer, a separate nonmagnetic layer and a magnetic change layer having magnetic characteristics which change according to temperature. Multiple cutouts, including one cutout with a different shape, are provided in a peripheral portion of the spin valve structure. A method of driving the magnetic memory element is characterized in that information is recorded by applying unipolar electric pulses.
Claims20
A magnetic memory element, comprising:
- a spin valve structure having a substantially circular periphery except for a plurality of cutouts extending inward from the periphery, the spin valve structure including a free layer, a pinning layer, and a first nonmagnetic layer that is disposed between the free layer and the pinning layer;
- a second nonmagnetic layer, arranged so that the free layer is disposed between the first and second nonmagnetic layers;
- and
- a magnetic change layer that is disposed on the second nonmagnetic layer, and having magnetic characteristics which change according to temperature;
- wherein one of the cutouts has a shape that is different from the shape of at least one other of the cutouts.
Dependencies are inferred from the claim text.