Cooking device and method of manufacture of the same
AssigneeSumitomo Osaka Cement Co., Ltd.
InventorsKeijiro Shigeru, Daisaku Maeda, Yasunori Metsugi, Akira Yazawa, Taishi Maruyama
Life of this patent
Estimating the term…
Abstract
The cooking device of the present invention comprises a base material and a thin film that is formed on a surface of this base material, wherein said thin film contains silicon (Si), zirconium (Zr) and oxygen (O), and is such that when said silicon (Si) and said zirconium (Zr) are respectively converted to silicon oxide (SiO2) and zirconium oxide (ZrO2), the weight percent of said silicon oxide (SiO2) relative to the total amount of said zirconium oxide (ZrO2) and said silicon oxide (SiO2) is 50 weight % or less.
Claims4
A cooking device comprising a base material and a thin film that is formed on a surface of this base material, wherein:
- said thin film contains silicon (Si), zirconium (Zr) and oxygen (O), and is such that when said silicon (Si) and said zirconium (Zr) are respectively converted to silicon oxide (SiO2) and zirconium oxide (ZrO2), the weight percent of said silicon oxide (SiO2) relative to the total amount of said zirconium oxide (ZrO2) and said silicon oxide (SiO2) is 1 weight % or more and 10 weight % or less, and
- a thickness of said thin film is 0.01 to 10 μm.
A cooking device comprising a base material and a thin film that is formed on a surface of this base material, wherein:
- said thin film contains silicon (Si), zirconium (Zr) and oxygen (O), and is such that when said silicon (Si) and said zirconium (Zr) are respectively converted to silicon oxide (SiO2) and zirconium oxide (ZrO2), the weight percent of said silicon oxide (SiO2) relative to the total amount of said zirconium oxide (ZrO2) and said silicon oxide (SiO2) is 1 weight % or more and 20 weight % or less,
- said thin film further contains phosphorus (P), and
- said phosphorus (P) is distributed at least in the surface layer of said thin film.
Dependencies are inferred from the claim text.