Light-emitting device, film-forming method and manufacturing apparatus thereof, and cleaning method of the manufacturing apparatus
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorShunpei Yamazaki
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Abstract
This invention provides a new film forming method in which, on the occasion that pressure is decreased by pressure decreasing means which was connected to a film forming chamber, and a film is formed by evaporating an organic compound material from a deposition source in the film forming chamber, minute amounts of gas (silane series gas) which comprises smaller particles than particles of the organic compound material, i.e., a material with a smaller atomic radius are flowed, and the material with a small atomic radius is made to be included in an organic compound film.
Claims13
A film forming method comprising the steps of:
- placing a substrate over an evaporation source in a film forming chamber, the evaporation source being filled with an organic compound;
- and
- depositing over the substrate a film including the organic compound by evaporating the organic compound in the film forming chamber,
- wherein material gas is introduced from a first nozzle to the film forming chamber during the deposition of the organic compound,
- wherein the material gas is selected from monosilane, disilane, trisilane, SiF4, GeH4, GeF4, and SnH4,
- wherein inert gas is introduced from a second nozzle to the film forming chamber during the deposition of the organic compound, and
- wherein the first nozzle and the second nozzle are located over the substrate and configured so that the material gas and the inert gas are mixed with each other after the material gas and the inert gas are released into the film forming chamber.
A film forming method comprising the steps of:
- placing a substrate over an evaporation source in a film forming chamber, the evaporation source being filled with an organic compound;
- and
- depositing over the substrate a film including the organic compound by evaporating the organic compound in the film forming chamber,
- wherein material gas is introduced from a first nozzle to the film forming chamber during the deposition of the organic compound,
- wherein the material gas is selected from monosilane, disilane, trisilane, SiF4, GeH4, GeF4 and SnH4,
- wherein the material gas is radicalized before the material gas is introduced into the film forming chamber,
- wherein inert gas is introduced from a second nozzle to the film forming chamber during the deposition of the organic compound, and
- wherein the first nozzle and the second nozzle are located over the substrate and configured so that the material gas and the inert gas are mixed with each other after the material gas and the inert gas are released into the film forming chamber.
Dependencies are inferred from the claim text.