Technique for manufacturing bit patterned media
AssigneeVarian Semiconductor Equipment Associates, Inc.
InventorsFrank Sinclair, Julian G. Blake
Life of this patent
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Abstract
A technique for manufacturing hit pattern media is disclosed. In one particular exemplary embodiment, the technique may be realized as a method for manufacturing bit pattern media. The method may comprise forming an intermediate layer comprising a modified region and a first region adjacent to one another, where the modified region and the first region may have at least one different property; depositing magnetic species on the first region of the intermediate layer to form an active region; and depositing non-ferromagnetic species on the modified region of the intermediate layer to form a separator.
Claims19
A method of forming a data storage media, the method comprising:
- forming an intermediate layer comprising a modified region and a first region adjacent to one another, wherein the modified region is formed by ion implantation, and wherein the modified region and the first region have at least one different property;
- depositing magnetic species on the first region of the intermediate layer to form an active region;
- and depositing non-ferromagnetic species on the modified region of the intermediate layer to form a separator, wherein the first region and the modified region have different structure and wherein the first region comprises one or more crystals and the modified region is amorphous.
A method of forming a data storage media, the method comprising:
- forming an intermediate layer comprising a modified region and a first region adjacent to one another, wherein the modified region is formed by ion implantation, and wherein the modified region and the first region have at least one different property;
- depositing magnetic species on the first region of the intermediate layer to form an active region;
- and depositing non-ferromagnetic species on the modified region of the intermediate layer to form a separator, wherein the active region and the separator are formed simultaneously, wherein the first region comprises one or more crystals and the modified region is amorphous.
A method of forming a data storage media, the method comprising:
- forming an intermediate layer comprising a first region and an amorphous region that are adjacent to one another, wherein the amorphous region is formed by ion implantation, and the first region comprising one or more crystals;
- depositing magnetic species on the first region of the intermediate layer to form an active region;
- and
- depositing non-ferromagnetic species on the amorphous region of the intermediate layer to form a separator.
A method of forming a data storage media, the method comprising:
- forming an intermediate layer comprising a modified region and a first region adjacent to one another, wherein the amorphous region is formed by ion implantation, and wherein the modified region and the first region have at least one different property;
- depositing magnetic species on the first region of the intermediate layer to form an active region;
- and depositing non-ferromagnetic species on the modified region of the intermediate layer to form a separator, wherein the first region and the modified region have different structure and wherein the first region is amorphous and the modified region comprises one or more crystals.
Dependencies are inferred from the claim text.