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US 8,709,277 B2Granted
Etching composition
AssigneesFUJIFILM Corporation, Fujifilm Electronic Materials U.S.A., Inc.
InventorsKazutaka Takahashi, Atsushi Mizutani, Tomonori Takahashi
Life of this patent
Estimating the term…
Abstract
This disclosure relates to an etching composition containing about 60% to about 95% of at least one sulfonic acid; about 0.005% to about 0.04% of chloride anion; about 0.03% to about 0.27% of bromide anion; about 0.1% to about 20% of nitrate or nitrosyl ion; and about 3% to about 37% of water.
Claims39
An etching composition, comprising:
- about 60% to about 95% of at least one sulfonic acid;
- about 0.005% to about 0.04% of chloride anion;
- about 0.03% to about 0.27% of bromide anion;
- about 0.1% to about 20% of nitrate or nitrosyl ion;
- and
- about 3% to about 37% of water.
3 more elements
A kit, comprising:
- at least one chloride containing compound in a first container;
- at least one compound containing a nitrate or nitrosyl ion in a second container;
- and
- at least one bromide containing compound in a third container;
- wherein the second container is different from the first and third containers.
2 more elements
Dependencies are inferred from the claim text.