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US 8,709,165 B2Granted
Method and apparatus for surface treatment using inorganic acid and ozone
AssigneeLam Research Corporation
InventorsHarald Okorn-Schmidt, Franz Kumning, Rainer Obweger, Thomas Wirnsberger
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Abstract
Improved removal of ion-implanted photoresist in a single wafer front-end wet processing station is achieved by dissolving gaseous ozone into relatively cool inorganic acid, dispensing the acid ozone mixture onto a wafer, and rapidly heating the surface of the wafer to a temperature at least 30° C. higher than the temperature of the acid ozone mixture.
Claims7
A method for treating a surface of an article, comprising:
- contacting ozone and an inorganic acid at a sub-ambient temperature in a range of from about 3° C. to less than 20° C., to form a liquid mixture comprising ozone dissolved in the inorganic acid;
- dispensing said liquid mixture onto a surface of an article to be treated, said liquid mixture having a first temperature;
- forming a liquid layer of said liquid mixture on the surface of the article to be treated;
- heating the surface of the article to be treated during or after dispensing said liquid mixture, to a second temperature;
- wherein the second temperature is at least 30° C. greater than the first temperature.
2 more elements
Dependencies are inferred from the claim text.